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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1179 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The DMT4008LFDF-7 is a 40V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a maximum drain-source voltage of 40V and a continuous drain current of 11.8A at +25°C. The device offers a low on-state resistance of 9.5mΩ at VGS=10V and 15.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1V to 3V, total gate charge of 17.1nC at VGS=10V, and input capacitance of 1179pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 155°C/W on a standard FR-4 board.
Feature Summary
- Low RDS(ON) minimizes conduction losses for high-efficiency power management
- Excellent Qgd x RDS(ON) Figure of Merit (FOM) ensures superior switching performance
- 0.6mm profile with a 4mm² PCB footprint ideal for low-profile applications
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000 units per reel quantity as documented in the manufacturer's ordering information. Confirm that the U-DFN2020-6 (Type F) case style matches the required mechanical constraints. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Select this component when a compact 4mm² footprint is required alongside low conduction losses. The low gate threshold voltage supports efficient drive from various logic levels. Evaluate the thermal resistance values against the specific copper area available on the target PCB layout to ensure adequate heat dissipation under expected load conditions.
Part Context
This part belongs to the DMT4008 series of N-channel MOSFETs designed by Diodes Incorporated. The series focuses on balancing low on-resistance with fast switching capabilities. The U-DFN2020-6 package provides a small form factor suitable for space-constrained portable electronics and modern power supply designs requiring high density.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching the 40V rating, N-channel configuration, and U-DFN2020-6 package dimensions.
