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Product Detailed Parameters
- Description：MOSFET N-CH 40V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：12.1A (Ta), 54.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1179 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta), 35.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT4008LFV-7 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) surface-mount package. The device features a maximum drain-source breakdown voltage of 40V and a gate-source voltage rating of ±20V. At VGS = 10V, the static drain-source on-resistance is typically 6.5mΩ with a maximum of 7.9mΩ at ID = 12A. Continuous drain current reaches 54.8A at TC = +25°C. Total gate charge is 17.1nC at VGS = 10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- 100% unclamped inductive switching capability for robust end applications
- Low input capacitance supporting superior switching performance
- Totally lead-free and fully RoHS compliant construction
Applications
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives including RoHS 2 and RoHS 3 compliance standards. Ensure the selected variant matches the required PowerDI3333-8 case outline dimensions for PCB layout compatibility.
Selection Notes
Select this component when designing circuits requiring low on-state resistance within a compact surface-mount footprint. Evaluate thermal dissipation requirements against the specified junction-to-ambient and junction-to-case thermal resistances. Consider the gate threshold voltage characteristics for logic-level drive compatibility in power management topologies.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining high switching efficiency. The PowerDI3333-8 package provides a compact solution suitable for space-constrained electronic designs requiring reliable power switching capabilities.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and electrical specifications.
