DMT4011LFG-7

$0.70

Description：MOSFET N-CH 40V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fc793b8edda6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：767 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：15.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT4011LFG-7

Overview

The DMT4011LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package and operates with a drain-source voltage of 40V. The device provides a maximum continuous drain current of 30A at a case temperature of +25°C, reducing to 24A at +70°C. The static drain-source on-resistance is specified as 11.5mΩ at VGS=10V and 17.8mΩ at VGS=4.5V. Total gate charge reaches 15.1nC at VGS=10V. Thermal resistance from junction to case is 8°C/W.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
Manufactured using advanced technology specifically optimized for DC-DC converter circuits.
Small form factor thermally efficient package enables higher density end products.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm compliance requirements such as RoHS status and halogen-free definitions prior to procurement. Ensure the selected component matches the required thermal and electrical ratings for the intended application environment.

Selection Notes

Select this component based on the 40V drain-source voltage rating and the specific on-resistance requirements at 10V or 4.5V gate drive voltages. Evaluate the thermal resistance characteristics relative to the expected ambient and case temperatures. Consider the small form factor package dimensions when designing for space-constrained printed circuit board layouts.

Part Context

This part belongs to the DMN/DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices utilize silicon technology and are housed in the PowerDI3333-8 surface-mount package. The series is engineered to balance low conduction losses with fast switching capabilities for modern electronic designs.

Replacement Considerations

The datasheet lists DMT4011LFG-13 as an alternative packaging option within the same product line. Verify pinout compatibility and electrical parameter equivalence before substituting other manufacturers' components.