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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 26.5A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 20V
- Power - Max：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMT4014LDV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 26.5A at 25°C case temperature. The device offers a low on-resistance of 19mΩ at VGS=10V and 29mΩ at VGS=4.5V. Packaged in a PowerDI3333-8 (Type UXC) surface-mount housing, it supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact package for space-constrained designs
- Low on-state resistance to minimize conduction losses during operation
- Fast switching speed with optimized gate charge characteristics
- Robust reliability verified through 100% unclamped inductive switching testing
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel quantity for this part number is two thousand units. Confirm that the component meets required environmental standards such as RoHS compliance before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel topology is required within a minimal footprint. Evaluate thermal performance based on the specified junction-to-case resistance values under your specific PCB copper layout conditions. Ensure the gate drive voltage aligns with the threshold requirements for optimal on-resistance performance.
Part Context
This device belongs to the DMT series of power MOSFETs designed for high-efficiency applications. It utilizes silicon technology housed in a lead-free, halogen-free molded plastic case. The PowerDI3333-8 package provides a balance between thermal dissipation capabilities and board space efficiency for modern electronic assemblies.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching critical parameters including voltage ratings, current capacity, and package dimensions to ensure functional compatibility.
