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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7.8A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Ta), 21.2A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：808pF @ 30V
- Power - Max：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMT4015LDV-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (Type UXC) surface-mount packaging. The device features a maximum drain-source voltage of 40V and a continuous drain current of 21.2A at TC = +25°C. Static drain-source on-resistance is specified as 20mΩ max at VGS = 10V and 25mΩ max at VGS = 4.5V. Total gate charge is 15.7nC at VGS = 10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
- Low on-state resistance to minimize conduction losses
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Wireless Charging
- DC-DC Converters
- Power Management
Procurement Notes
Verify the ordering suffix matches the required tape and reel quantity, as the -13 suffix indicates 3,000 units per reel. Confirm package type is PowerDI3333-8 (Type UXC). Ensure compliance with RoHS and halogen-free requirements if applicable to your manufacturing process. Check datasheet revision DS42627 Rev. 2 - 2 for latest specifications.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(ON) is needed for power management circuits. Consider the 40V rating and 21.2A current capability relative to thermal dissipation constraints. Evaluate gate drive voltage compatibility, noting the 25mΩ specification at VGS = 4.5V for logic-level applications. Verify PCB layout supports the PowerDI3333-8 footprint for optimal thermal performance.
Part Context
This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. It is designed for high-efficiency power management applications requiring small form factors. The device integrates an N-channel enhancement mode transistor within a lead-free, green molding compound case rated UL 94V-0.
Replacement Considerations
DMT4015LDV-7 is a parameter-equivalent alternative with identical electrical characteristics but packaged in a 2,000-unit tape and reel.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for Gate-Source Voltage (VGSS) is ±16V.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q100/101/200 qualification, customers must contact Diodes Incorporated directly.
What is the typical turn-on delay time?
The typical turn-on delay time (tD(ON)) is 7.5ns under test conditions of VGS = 10V, VDS = 30V, Rg = 6Ω, and ID = 10A.
