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The DMT43M8LFV-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40 V and utilizes the PowerDI3333-8 (Type UX) surface-mount package. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 4 mΩ at VGS = 10 V and 5.5 mΩ at VGS = 4.5 V. Continuous drain current ratings are 87 A at TC = +25°C and 72 A at TC = +70°C, with a pulsed drain current capability of 120 A.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental compliance standards, including RoHS directives and halogen-free requirements, prior to integration into final assemblies.
Select this component when low conduction losses and compact footprint are critical design constraints. Evaluate thermal management requirements based on junction-to-case resistance and expected operating temperatures. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.
This part belongs to the DMTH43M8LF series from Diodes Incorporated, designed for space-constrained power applications. It shares similar electrical characteristics with other members of the family but differs in specific packaging or qualification details. The PowerDI3333-8 package provides a robust solution for modern PCB layouts requiring high current handling in minimal space.
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, thermal resistance values, and maximum ratings to ensure compatibility without modifying existing circuit designs or thermal interfaces.