DMT47M2LDV-7

Overview

The DMT47M2LDV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage of 40 V and a maximum on-resistance of 10.8 mΩ at VGS = 10 V. The device supports a continuous drain current of 30.2 A at TC = +25°C and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 1.2 V to 2.3 V, total gate charge of 14.0 nC, and turn-on delay time of 3.95 ns.

Feature Summary

• Dual channel configuration for compact power management solutions
• Optimized low on-state resistance to minimize conduction losses
• Fast switching speed with low input capacitance
• Qualified to AEC-Q101 standards for high reliability

Applications

• Motor control systems
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure the PowerDI3333-8 footprint aligns with your PCB design guidelines before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a small surface-mount package. Consider the 40 V rating and 10.8 mΩ on-resistance for efficiency-critical applications. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your expected operating conditions.

Part Context

This part belongs to the DMT series of MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI3333-8 form factor. The device is intended for general-purpose switching applications requiring high efficiency and robust performance in space-constrained designs.

Replacement Considerations

The DMT47M2LDVQ-7 is an automotive-compliant alternative available under a separate datasheet. Verify pin compatibility and electrical specifications before substituting with other dual N-channel MOSFETs in similar packages.

FAQ

What is the maximum continuous drain current at case temperature?

The maximum continuous drain current is 30.2 A when the case temperature is maintained at +25°C.

Is this component suitable for automotive applications?

While standard versions are not explicitly qualified, an automotive-compliant variant (DMT47M2LDVQ) is available under a separate datasheet.

What is the typical turn-on rise time?

The typical turn-on rise time is 5.41 ns under standard test conditions.