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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.9A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.9A (Ta), 30.2A (Tc)
- Rds On (Max) @ Id, Vgs：10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：891pF @ 20V
- Power - Max：2.34W (Ta), 14.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMT47M2LDVQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage of 40 V and a maximum on-resistance of 10.8 mΩ at VGS = 10V. The device supports a continuous drain current of 30.2 A at TC = +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a tape and reel with a quantity of 3000 units, it meets AEC-Q101 standards for automotive reliability.
Feature Summary
- Dual channel configuration designed for high conversion efficiency and low on-state losses
- Qualified to AEC-Q101 standards with PPAP capability for stringent automotive applications
- Manufactured in IATF 16949 certified facilities using lead-free, halogen-free materials
Applications
- Motor controls
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required 3000-unit tape and reel packaging format. Confirm that the PowerDI3333-8 (Type UXC) package dimensions align with the target PCB footprint. Ensure the component meets all applicable environmental compliance requirements for the intended deployment region.
Selection Notes
Select this component when a compact dual N-channel solution is required for automotive-grade power management. The 40V rating and low RDS(ON) make it suitable for efficient switching in space-constrained designs. Evaluate thermal performance against the specified junction-to-ambient resistance for the expected operating environment.
Part Context
This part belongs to the DMT47 series of automotive-qualified MOSFETs from Diodes Incorporated. It utilizes silicon technology and is specifically engineered to meet the rigorous demands of modern vehicle electronics. The dual configuration allows for independent control of two channels within a single small outline package.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers before implementation. Cross-referencing electrical parameters and package dimensions is essential to ensure functional compatibility without compromising system reliability or safety standards.
FAQ
What is the maximum continuous drain current for this dual MOSFET?
The maximum continuous drain current is 30.2 A at a case temperature of +25°C.
Is this component suitable for automotive environments?
Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities.
What is the gate threshold voltage range?
The gate threshold voltage ranges from a minimum of 1.2 V to a maximum of 2.3 V under standard test conditions.
