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The DMT47M2SFVWQ-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8/SWP (Type UX) package. It features a drain-source voltage of 40 V and a maximum on-resistance of 7.5 mΩ at VGS = 10 V. The device supports a continuous drain current of 49.1 A at TC = +25°C and 15.4 A at TA = +25°C. Total power dissipation reaches 27.1 W at TC = +25°C and 2.67 W at TA = +25°C. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific suffix '-7' corresponds to the 2,000-unit tape and reel carrier configuration. Confirm that the required packaging quantity aligns with standard factory reel sizes. Ensure the procurement channel sources directly from authorized distributors to maintain component authenticity and traceability records.
Select this component when an automotive-grade N-channel MOSFET with low on-resistance is required. The 40 V rating suits low-voltage DC systems. The PowerDI3333-8 package provides a compact footprint suitable for space-constrained designs. Verify thermal management requirements against the specified junction-to-case resistance values.
This part belongs to the DMT47M2 series of automotive MOSFETs. It utilizes silicon technology within a molded plastic green molding compound. The device is totally lead-free and fully RoHS compliant. It is designed to minimize on-state losses while maintaining robust switching performance.
DMT47M2LFVWQ-7
Yes, it is qualified to AEC-Q101 standards and supported by a PPAP.
The maximum operating junction temperature is +150°C.