DMT6002LPS-13

$2.19

Description：MOSFET N-CH 60V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e69463ff5d5e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：130.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6555 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMT6002LPS-13

Overview

The DMT6002LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 (Type K) surface-mount package. The device features a drain-source voltage rating of 60V and a continuous drain current capacity of 100A at a case temperature of +25°C. The maximum on-state resistance is specified as 2mΩ at VGS=10V and 3mΩ at VGS=6V, both measured at ID=50A. Total gate charge is 130.8nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features 100% unclamped inductive switching testing to ensure reliable and robust end application operation.
Utilizes a thermally efficient package profile under 1.1mm to support cooler running in thin applications.

Applications

Switching
Synchronous Rectification
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is classified as a halogen and antimony-free green device. Ensure the procurement documentation references the correct datasheet revision DS39090 Rev. 2 - 2 for accurate electrical parameter validation.

Selection Notes

Select this component when low conduction losses are critical due to its sub-3mΩ on-resistance characteristics. Consider the PowerDI5060-8 package dimensions if board space constraints require a profile below 1.1mm. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 0.9°C/W for high-current synchronous rectification scenarios.

Part Context

This part belongs to the DMT6002LPS series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is distinct from other variants in the family by its specific 60V breakdown voltage and optimized on-resistance values within the PowerDI5060-8 footprint. The product line targets modern power management solutions requiring compact form factors.

Replacement Considerations

Consult official manufacturer substitution lists or cross-reference databases for verified equivalent components. Do not assume functional compatibility with other MOSFETs sharing similar voltage ratings without verifying pinout alignment and thermal characteristics.