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Product Detailed Parameters
- Description：MOSFET N-CH 60V 23A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT6004SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8 surface-mount packaging and operates with a drain-source voltage of 60V. The device supports a continuous drain current of 100A at case temperature of +25°C, with a maximum on-resistance of 3.1mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage ranging from 2V to 4V, total gate charge of 95.4nC, and a junction-to-case thermal resistance of 0.9°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features low gate charge characteristics to reduce switching losses during operation.
- Includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robustness.
Applications
- Switching applications
- Synchronous rectifications
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented. Confirm that the component meets RoHS directives and Halogen/Antimony-free requirements if environmental compliance is required for the assembly process. Ensure the selected package variant matches the PowerDI5060-8 footprint specifications.
Selection Notes
Select this component when a low-profile surface-mount solution is required for high-current DC-DC conversion or synchronous rectification. The PowerDI5060-8 package provides significant thermal dissipation capabilities compared to standard small-outline packages. Evaluate the 3.1mΩ on-resistance against system conduction loss targets and verify compatibility with the 10V gate drive voltage level.
Part Context
This part belongs to the DMT6004 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing power losses through optimized silicon technology within compact surface-mount footprints. The DMT6004SPS-13 specifically denotes the version packaged in reels for automated surface-mount assembly processes.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-referencing requires matching the 60V rating, 100A current capacity, and PowerDI5060-8 package dimensions to ensure mechanical and electrical compatibility without design modification.
