DMT6006SPS-13

DMT6006SPS-13

$0.31
  • Description:MOSFET N-CH 60V PWRDI5060
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:c97d69a64915 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V PWRDI5060
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:16.2A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.2mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27.9 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1721 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.45W (Ta), 89.3W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI5060-8
  • Package / Case:8-PowerTDFN

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DMT6006SPS-13

Overview

The DMT6006SPS-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 60V, a continuous drain current of 98A at TC=25°C, and a typical on-resistance of 4.8mΩ (max 6.2mΩ) at VGS=10V. The device has a total gate charge of 27.9nC, operates within a junction temperature range of -55°C to +150°C, and includes an integrated body diode with a forward voltage of 1.2V max.

Feature Summary

  • Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
  • Features low input capacitance and fast switching speed to enhance system efficiency.
  • Manufactured with lead-free finish, RoHS compliance, and halogen/antimony-free green materials.

Applications

  • Synchronous rectifiers
  • DC-DC converters
  • Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the component meets the required environmental standards, including RoHS directives and halogen-free specifications, before finalizing procurement orders.

Selection Notes

Select this component when a 60V rating and high current handling capability are required in a compact surface-mount footprint. Ensure the thermal design accommodates the specified thermal resistance values for both ambient and case-mounted operating conditions.

Part Context

This part belongs to the Diodes Incorporated DMT6006 series of N-channel MOSFETs. It utilizes the PowerDI5060-8 package, which provides a robust mechanical structure and efficient thermal dissipation through an exposed drain pad for surface mount technology applications.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers or different series without validating pinout, electrical parameters, and package dimensions against the original datasheet.

FAQ

Is the DMT6006SPS-13 qualified for automotive applications?

The standard DMT6006SPS-13 is not explicitly qualified for automotive use. For AEC-Q100/101/104/200 qualified parts, contact Diodes Incorporated directly.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 390A, defined by a 10µs pulse duration with a 1% duty cycle.

DMT6006SPS-13DMT6006SPS-13
$0.31
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