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The DMT6006SPS-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 60V, a continuous drain current of 98A at TC=25°C, and a typical on-resistance of 4.8mΩ (max 6.2mΩ) at VGS=10V. The device has a total gate charge of 27.9nC, operates within a junction temperature range of -55°C to +150°C, and includes an integrated body diode with a forward voltage of 1.2V max.
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the component meets the required environmental standards, including RoHS directives and halogen-free specifications, before finalizing procurement orders.
Select this component when a 60V rating and high current handling capability are required in a compact surface-mount footprint. Ensure the thermal design accommodates the specified thermal resistance values for both ambient and case-mounted operating conditions.
This part belongs to the Diodes Incorporated DMT6006 series of N-channel MOSFETs. It utilizes the PowerDI5060-8 package, which provides a robust mechanical structure and efficient thermal dissipation through an exposed drain pad for surface mount technology applications.
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers or different series without validating pinout, electrical parameters, and package dimensions against the original datasheet.
The standard DMT6006SPS-13 is not explicitly qualified for automotive use. For AEC-Q100/101/104/200 qualified parts, contact Diodes Incorporated directly.
The maximum pulsed drain current is 390A, defined by a 10µs pulse duration with a 1% duty cycle.