DMT6007LFGQ-13

$1.30

Description：MOSFET N-CH 60V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d51281602dca Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT6007LFGQ-13

Overview

The DMT6007LFGQ-13 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (V_DSS) of 60 V and a maximum continuous drain current (I_D) of 80 A at T_C = +25°C. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 6 mΩ at V_GS = 10 V and 8.5 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is typically 41.3 nC at V_GS = 10 V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 package.

Feature Summary

AEC-Q101 qualified with PPAP capability for automotive reliability
Low R_DS(ON) minimizes on-state power losses
Excellent Figure of Merit (FOM) via optimized Qgd × R_DS(ON)
Thermally efficient small form factor package enables higher density designs

Applications

Brushless DC motor controls
DC-DC converters
Load switches

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity, as the -13 suffix indicates a tape and reel carrier containing 3,000 units. Confirm compliance with RoHS directives and halogen-free requirements if mandated by your design specifications. Ensure the procurement channel provides traceability documentation suitable for IATF 16949 certified manufacturing environments.

Selection Notes

Select this component when designing circuits requiring high current handling in a compact footprint. The low on-resistance supports efficient power conversion in DC-DC applications. Consider the thermal resistance characteristics and ensure adequate PCB copper area for heat dissipation to maintain performance within the specified operating temperature range.

Part Context

This part belongs to the DMT6007LFGQ series from Diodes Incorporated. It is manufactured in IATF 16949 certified facilities to meet stringent automotive quality standards. The device is specifically engineered to provide robust performance in demanding electronic systems while maintaining a small physical profile.