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Product Detailed Parameters
- Description：MOSFET N-CH 60V 37.2A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：37.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMT6009LCT is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 37.2A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 12mΩ max at VGS = 10V and 14.5mΩ max at VGS = 4.5V. Total gate charge (QG) is 33.5nC at VGS = 10V. Thermal resistance from junction to case (RθJC) is 5°C/W, with a total power dissipation of 25W at TC = +25°C. Operating temperature range spans -55°C to +150°C.
Feature Summary
- Low on-resistance and fast switching characteristics for high-efficiency power management
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device packaging
Applications
- DC-DC Converters
- Power Management Functions
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and reel specifications. Confirm compliance requirements such as RoHS and halogen-free status directly with the supplier or datasheet notes before procurement. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the electrical characteristics section.
Selection Notes
Select this component for applications requiring low conduction losses and rapid switching speeds within a 60V system. Evaluate the thermal performance based on the specified RθJA and RθJC values relative to the expected ambient or case temperatures. Consider the gate threshold voltage and total gate charge when designing the driver circuitry to ensure efficient turn-on and turn-off transitions under varying load conditions.
Part Context
This part belongs to the DMT6009 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes advanced silicon technology to achieve low on-resistance and optimized figure of merit. The DMT6009LCT specifically denotes the TO220AB through-hole package variant, distinguishing it from surface-mount options like PowerDI or SO-8 packages available within the same product family.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent part numbers. Cross-reference key parameters including BVDSS, ID, RDS(ON), and package dimensions to ensure functional compatibility.
