DMT6009LK3-13

$1.29

Description：MOSFET N-CH 60V 13.3A/57A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f0f854d79696 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13.3A/57A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13.3A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT6009LK3-13

Overview

The DMT6009LK3-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage (BVDSS) of 60V and a continuous drain current (ID) of 57A at TC = +25°C. The device offers a low on-state resistance (RDS(ON)) of 10mΩ max at VGS = 10V and 12.8mΩ max at VGS = 4.5V. Total gate charge (Qg) is 33.5nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO252 package.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Qualified to AEC-Q101 standards for high reliability applications.

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if these specifications are mandatory for your assembly process. Ensure compatibility with standard surface mount reflow soldering profiles.

Selection Notes

Select this component when a 60V rating and low RDS(ON) are required for DC-DC converter or power management designs. Consider the TO252 package dimensions and thermal characteristics for PCB layout. Evaluate the gate charge and switching times against driver capabilities to optimize efficiency. Verify that the continuous drain current and power dissipation ratings align with the intended thermal environment.

Part Context

This part belongs to the DMTH/DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize advanced silicon technologies to achieve low on-resistance and fast switching speeds. The series is commonly used in various power conversion and management applications requiring reliable performance in compact packages.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference parameters such as BVDSS, RDS(ON), Qg, and package type when evaluating alternatives.