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Product Detailed Parameters
- Description：MOSFET N-CHA 60V 10.6A POWERDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT6009LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 package and operates with a drain-source voltage of 60V. The device provides a maximum continuous drain current of 10.6A at 25°C ambient temperature, rising to 87A at case temperature. Its static drain-source on-resistance is specified as 10mΩ at VGS=10V and 12mΩ at VGS=4.5V. Total gate charge is 33.5nC at VGS=10V. Thermal resistance from junction to case is 1.1°C/W, supporting up to 113W power dissipation under case mounting conditions.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features 100% unclamped inductive switching testing to ensure robust end-application reliability.
- Low gate charge characteristics are utilized to minimize switching losses during operation.
Applications
- High frequency switching
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the PowerDI5060-8 package variant matches the design footprint requirements. Ensure compliance with RoHS directives and halogen-free specifications if mandated by the target application standards. Cross-reference the JEDEC qualification status against project reliability protocols.
Selection Notes
Select this component when a low on-resistance N-channel MOSFET is required within a 60V rating envelope. Evaluate thermal management needs based on the 1.1°C/W junction-to-case resistance for high-current scenarios. Consider the 10mΩ on-resistance specification for efficiency optimization in power conversion circuits. Verify gate drive voltage compatibility with the 10V and 4.5V threshold specifications.
Part Context
This part belongs to the DMT6009LPS series of N-channel enhancement mode MOSFETs. It utilizes the PowerDI5060-8 surface-mount package designed for efficient heat dissipation. The product line emphasizes low RDS(ON) and low Qg to support modern power management demands. It is distinct from automotive-grade variants which carry specific AEC-Q qualifications.
Replacement Considerations
For automotive applications requiring specific change control or IATF 16949 manufacturing, consult the related automotive grade parts with the Q-suffix. Verify pinout compatibility and thermal characteristics when substituting with other 60V N-channel MOSFETs in the PowerDI5060-8 package.
