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Product Detailed Parameters
- Description：MOSFET N-CH 60V 14A 8SO T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT6010LSS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an SO-8 surface-mount package and utilizes silicon technology. The device provides a maximum drain-source breakdown voltage of 60V and continuous drain currents of 14.0A at 25°C or 11.5A depending on gate drive conditions. Static drain-source on-resistance is rated at 8mΩ at VGS=10V and 12mΩ at VGS=4.5V. Total gate charge reaches 41.3nC at VGS=10V, with operating temperatures ranging from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state losses while maintaining superior switching performance
- Qualified to AEC-Q101 standards for high reliability applications
- Totally lead-free and fully RoHS compliant with halogen and antimony free composition
Applications
- Notebook battery power management
- Load switch circuits
- Backlighting systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable environmental directives relevant to your manufacturing region. Ensure that the supplier source is authorized to prevent counterfeit components. Cross-reference the datasheet revision number to guarantee electrical characteristics align with current production batches.
Selection Notes
Select this component when low on-resistance is critical for efficiency in portable electronics. Evaluate thermal resistance requirements against the SO-8 package limitations. Consider the gate threshold voltage compatibility with standard logic drivers. Verify that the 60V rating provides sufficient margin for the target circuit's peak voltage transients.
Part Context
This part belongs to the DMT60 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on balancing low conduction losses with fast switching speeds. The SO-8 case style offers a compact footprint suitable for dense printed circuit board layouts in consumer and industrial electronic devices.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pinout or electrical parameter compatibility with other 60V SO-8 MOSFETs without explicit datasheet confirmation.
