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Product Detailed Parameters
- Description：MOSFET N-CH 60V 9.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：785 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta), 11W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT6012LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 9.5 A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 14 mΩ at VGS = 10 V and 21 mΩ at VGS = 4.5 V. It utilizes a U-DFN2020-6 package with a 0.6 mm profile, operates within a junction temperature range of -55°C to +150°C, and has a total power dissipation of 1.9 W at +25°C.
Feature Summary
- Features a 0.6 mm low-profile case design suitable for space-constrained applications.
- Includes 100% unclamped inductive switching (UIS) testing during production to ensure robustness.
- Constructed with a molded plastic green compound that is halogen-free and antimony-free.
Applications
- DC-DC converters
- Adaptor switches
- Wireless charging systems
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantity and reel specifications. Confirm compliance requirements such as RoHS directives and lead-free status directly from the datasheet before procurement. Ensure the component meets all automotive or industrial qualification standards if required by the end application.
Selection Notes
Select this component when a compact surface-mount solution is required for 60 V power management circuits. Evaluate thermal performance based on the specified RθJA values for the intended PCB copper area. Consider the gate threshold voltage and total gate charge characteristics for driving compatibility in high-efficiency switching designs.
Part Context
This part belongs to the DMT6012LFDF series of N-channel MOSFETs designed for high-efficiency power management. It is housed in a U-DFN2020-6 (Type F) package, which provides a small footprint of 4mm². The device is optimized to minimize on-state resistance while maintaining superior switching performance for modern electronic applications.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent parts. Cross-referencing requires matching critical parameters such as VDS, ID, RDS(ON), and package dimensions to ensure functional compatibility without modification.
