DMT6013LFDF-13

$0.31

Description：MOSFET N-CH 60V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:131dc89c56cb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1081 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6013LFDF-13

Overview

The DMT6013LFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 10A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 15mΩ at VGS=10V and 21.5mΩ at VGS=4.5V. Total gate charge is 15nC at VGS=10V. Thermal dissipation reaches 10.8W at case temperatures of 25°C, with a junction-to-case thermal resistance of 11.6°C/W. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features a 0.6mm profile ideal for low-profile applications with a PCB footprint of 4mm².
Compliant with RoHS directives and halogen/antimony-free standards.

Applications

DC/DC Converter
Adaptor Switch
Wireless Charging

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units per manufacturer specifications. Confirm that the U-DFN2020-6 (Type F) package dimensions align with the target PCB layout constraints. Ensure compatibility with NiPdAu terminal finishes for solderability requirements.

Selection Notes

Select this component when a compact form factor is critical due to its small 4mm² footprint and 0.6mm height. Evaluate the 15mΩ on-resistance against system efficiency targets at 10V gate drive. Consider the 60V breakdown voltage for appropriate headroom in 12V or 24V bus architectures.

Part Context

This part belongs to the Diodes Incorporated DMT series of N-channel MOSFETs. It utilizes the U-DFN2020-6 (Type F) package, which provides a low-profile solution suitable for space-constrained designs. The device is engineered for general-purpose switching applications requiring moderate current handling capabilities.