DMT6013LFDF-7

$0.34

Description：MOSFET N-CH 60V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b6af57388068 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1081 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6013LFDF-7

Overview

The DMT6013LFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 10.0A at +25°C ambient temperature. The device offers a typical static drain-source on-resistance of 12.2mΩ at VGS=10V and ID=8.5A, with a maximum of 15mΩ under the same conditions. It utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Manufactured using silicon technology with a 0.6mm low-profile case ideal for space-constrained designs.
Features a PCB footprint of 4mm² and includes 100% Unclamped Inductive Switch (UIS) testing in production.

Applications

DC/DC Converters
Adaptor Switches
Wireless Charging Systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free status before finalizing procurement decisions.

Selection Notes

Select this component when a compact 60V N-channel MOSFET with low on-resistance is required. Ensure the gate drive voltage supports the specified RDS(ON) thresholds. Evaluate thermal dissipation requirements based on the junction-to-ambient resistance values provided in the datasheet for the target application environment.

Part Context

This part belongs to the DMT6013LFDF series from Diodes Incorporated. It is an N-channel enhancement mode MOSFET designed for general-purpose switching applications. The device is housed in a U-DFN2020-6 package, providing a balance between electrical performance and physical size for modern electronic designs.

Replacement Considerations

Consult official manufacturer substitution lists or cross-reference tools for verified equivalent parts. Do not assume pin compatibility or electrical equivalence with other 60V MOSFETs without verifying datasheet parameters.