DMT6017LDV-13

$0.28

Description：MOSFET 2N-CH 25.3A PWRDI3333
Series：-

SKU:3b27db7bddb5 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 25.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：25.3A (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXC)
Grade：-
Qualification：-

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DMT6017LDV-13

Overview

The DMT6017LDV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXC) surface-mount package. The device supports a drain-source voltage of 65 V and a continuous drain current of 25.3 A at TC = +25°C. Maximum on-resistance is specified as 22 mΩ at VGS = 10V and 29 mΩ at VGS = 4.5V. Gate threshold voltage ranges up to 2.3 V. Operating temperature spans from -55°C to +150°C.

Feature Summary

Dual N-channel configuration with integrated gate protection diodes for enhanced reliability.
Optimized for low on-state resistance to minimize conduction losses in power management circuits.
Validated for unclamped inductive switching (UIS) performance during production testing.

Applications

Wireless charging systems
DC-DC converters
Power management modules

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the PowerDI3333-8 (Type UXC) package dimensions align with the target PCB footprint. Ensure compliance with RoHS 3 and halogen-free requirements if mandated by the end application specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for high-efficiency power conversion. The low thermal resistance junction-to-case rating supports effective heat dissipation in constrained layouts. Evaluate the gate charge characteristics against driver capabilities to ensure optimal switching speed and efficiency within the target circuit design.

Part Context

This part belongs to the DMT6017 series of N-channel enhancement mode MOSFETs. It utilizes the PowerDI®3333-8 case style, which provides a robust lead-free plastic molding compound. The device is designed to balance low static resistance with fast dynamic switching characteristics suitable for modern power electronics.