DMT6017LFV-7

$0.73

Description：MOSFET N-CH 65V 36A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:789ad547e52b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 65V 36A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：891 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.12W (Ta), 39.06W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT6017LFV-7

Overview

The DMT6017LFV-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a maximum drain-source voltage (BVDSS) of 65 V and a gate-source voltage rating of ±16 V. The device provides a continuous drain current of 36 A at a case temperature of +25°C. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 20 mΩ at VGS = 10 V and 23 mΩ at VGS = 4.5 V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features an ESD protected gate structure to enhance reliability against electrostatic discharge events.
Compliant with RoHS directives and manufactured using halogen-free and antimony-free green materials.

Applications

Motor Control
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix when sourcing components. The datasheet lists DMT6017LFV-7 packaged in 2,000-unit tape and reel quantities. Confirm that the received part matches the exact alphanumeric designation to ensure correct packaging and handling specifications are met during assembly.

Selection Notes

Select this component for designs requiring a compact footprint with efficient thermal dissipation capabilities. The PowerDI3333-8 package occupies significantly less board area compared to traditional SO-8 packages. Ensure the application operates within the specified 65 V drain-source voltage limit and accounts for thermal resistance values under expected load conditions.

Part Context

This component belongs to the DMT6017 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is designed to provide robust performance in space-constrained electronic circuits. The manufacturer offers various packaging options within this product family to accommodate different production volume requirements.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure functional compatibility without design modification.