DMT64M2LPSW-13

$1.18

Description：MOSFET N-CH 60V 20.7A/100A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a52e49e05205 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 20.7A/100A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2799 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 83.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type Q)
Package / Case：8-PowerTDFN

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DMT64M2LPSW-13

Overview

The DMT64M2LPSW-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package with wettable flank technology. The device features a maximum drain-source voltage of 60V and a continuous drain current of 100A at case temperature of +25°C. Static drain-source on-resistance is rated at 4.4mΩ max at VGS=10V and 6.4mΩ max at VGS=4.5V. Total gate charge is 46.7nC at VGS=10V. Thermal resistance from junction to case is 1.5°C/W, supporting high-efficiency power management applications.

Feature Summary

Features wettable flank construction for improved optical inspection reliability.
Designed to minimize on-state resistance while maintaining superior switching performance.
Includes 100% unclamped inductive switching (UIS) testing during production.

Applications

High frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance standards and is halogen-free as defined by the manufacturer's green product specifications. Ensure the intended application environment remains within the specified operating temperature range of -55°C to +150°C.

Selection Notes

Select this component when a low profile surface mount solution is required for high-current DC-DC conversion or synchronous rectification tasks. The PowerDI5060-8 package offers a balance between thermal dissipation capabilities and board space efficiency. Consider the specific gate threshold requirements and total gate charge values to ensure compatibility with the driving circuitry for optimal switching speed and efficiency.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered for high-efficiency power management systems. The series emphasizes low on-resistance and fast switching characteristics suitable for modern compact electronic designs requiring robust thermal performance.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly adhere to electrical parameters and package dimensions provided in the datasheet.