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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V V-DFN3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：16.1A (Ta), 77.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2664 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：990mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：V-DFN3333-8 (Type B)
- Package / Case：8-PowerVDFN
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Overview
The DMT64M8LCG-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) case with a maximum drain-source voltage of 60V and a gate-source voltage rating of ±20V. The device exhibits a typical on-resistance of 4.8mΩ at VGS=10V and 6.5mΩ at VGS=4.5V, supporting continuous drain currents up to 77.8A at TC=+25°C. Thermal resistance from junction to case is 2.5°C/W, while the operating temperature range spans -55°C to +150°C.
Feature Summary
- High conversion efficiency achieved through minimized on-state losses
- Fast switching speed supported by low input capacitance
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant construction
Applications
- Synchronous rectifier circuits
- Notebook battery power management systems
- Load switch applications
- DC-DC converters
Procurement Notes
Verify that the ordering suffix matches the required tape and reel quantity. Confirm the specific package type designation aligns with board layout requirements. Ensure compliance with environmental directives such as RoHS and halogen-free standards if mandated by the end application. Cross-reference the date code and marking information against production timelines.
Selection Notes
Evaluate thermal performance based on the specified junction-to-case resistance when designing heatsinking solutions. Consider the gate threshold voltage variations across the operating temperature range for driver compatibility. Assess the safe operation area limits under pulsed conditions to ensure robustness during transient events in the target circuit design.
Part Context
This component belongs to the DMT64M8LCG series of N-channel enhancement mode MOSFETs. It utilizes the PowerDI family of surface-mount packages designed for high current density and efficient thermal dissipation. The device represents a generation focused on balancing low on-resistance with superior switching characteristics for portable electronics.
Replacement Considerations
DMT64M8LCG-7
FAQ
What is the maximum avalanche energy rating?
The maximum avalanche energy rating is 111 mJ with an inductance of 0.3mH.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification or PPAP capability, direct contact with Diodes Incorporated or a local representative is required.
