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Product Detailed Parameters
- Description：MOSFET N-CH 60V 54.1A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：54.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2078 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta), 41.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT68M8LFV-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60 V and a gate-source voltage rating of ±20 V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 9.5 mΩ at VGS = 10 V and 13.3 mΩ at VGS = 4.5 V. Continuous drain current reaches 54.1 A at TC = +25°C, with a pulsed drain current capability of 210 A. Total gate charge is 30 nC at VGS = 10 V. Thermal resistance from junction to case is 3 °C/W, supporting operation within a temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
- Includes an ESD protected gate structure to enhance reliability during handling and operation.
- Verified through 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end application performance.
Applications
- Motor Control
- DC-DC Converters
- Power Management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration requires checking the designated quantity per reel. Confirm compliance requirements such as RoHS status and moisture sensitivity levels prior to integration into manufacturing processes.
Selection Notes
Select this component when a compact footprint is required alongside high current handling capabilities. The low thermal resistance facilitates effective heat dissipation in dense layouts. Ensure the operating voltage does not exceed the 60 V drain-source limit and verify gate drive voltages align with the specified RDS(ON) thresholds.
Part Context
This part belongs to the PowerDI family of surface-mount devices designed for space-constrained electronics. It utilizes the PowerDI3333-8 package, which provides enhanced thermal performance relative to its physical dimensions. The device integrates advanced silicon technology to optimize the trade-off between conduction losses and switching speed.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing parameters such as package type, pinout configuration, and electrical ratings is essential before implementing any substitute components in existing designs.
