DMT68M8LSS-13

$0.51

Description：MOSFET N-CHANNEL 60V 28.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:02668faaad3d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHANNEL 60V 28.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：28.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2107 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT68M8LSS-13

Overview

The DMT68M8LSS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and an SO-8 package. The device provides a typical on-resistance (R_DS(ON)) of 8.5 mΩ at V_GS = 10 V with a continuous drain current of 12.1 A at +25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high conversion efficiency and minimized on-state losses through low R_DS(ON).
Features fast switching speed and low input capacitance for high-frequency applications.
Includes ESD protected gate structure for enhanced reliability.

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the component against official datasheet DS39396 Rev. 2-2 specifications. Confirm the SO-8 package dimensions, lead finish, and RoHS compliance status match project requirements. Ensure thermal management aligns with the specified junction-to-ambient resistance values under intended operating conditions.

Selection Notes

Select this component for power management designs requiring a balance between low conduction loss and rapid switching performance. Evaluate the 60 V breakdown voltage and 12.1 A continuous current rating against circuit load demands. Consider the SO-8 footprint constraints and thermal dissipation capabilities relative to the system's ambient environment.

Part Context

This part belongs to the DMT68M8LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to optimize efficiency in power management applications by reducing on-state resistance while maintaining superior switching characteristics compared to standard alternatives.

Replacement Considerations

Consult the manufacturer's documentation for verified equivalent parts or updated revisions. Verify pinout compatibility and electrical parameters before substituting any alternative components in existing designs.