DMT69M8LFV-7

$1.02

Description：MOSFET N-CH 60V 45A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:04aefae1839d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 45A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT69M8LFV-7

Overview

The DMT69M8LFV-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (Type UX) packaging and silicon technology. Key electrical parameters include a maximum drain-source on-resistance of 9.5mΩ at VGS=10V and 13.3mΩ at VGS=4.5V, with a continuous drain current rating of 45A at TC=25°C. The device features a gate-source voltage range of ±16V, total gate charge of 33.5nC at VGS=10V, and operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Guarantees 100% unclamped inductive switching capability to ensure robust end-application reliability.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Power Management Functions
DC-DC Converters
Synchronous Rectifier

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a standard tape and reel quantity of 2000 units. Confirm that the required package type matches the PowerDI3333-8 specification. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3 if applicable to your manufacturing process. Cross-reference datasheet revision DS39220 Rev. 3 for accurate technical specifications.

Selection Notes

Select this component for designs requiring low conduction losses in compact form factors. The 60V breakdown voltage suits general-purpose power management tasks. Evaluate thermal constraints carefully, as the small PowerDI3333-8 package has limited heat dissipation capabilities compared to larger packages. Consider the gate threshold voltage characteristics for compatibility with your driver circuitry logic levels.

Part Context

This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI3333-8 footprint with other variants like DMTH69M8LFVW-7 but differs in specific electrical ratings and internal die configurations. The 'DMT' prefix denotes the standard product line, while '69' indicates the 60V class rating.

Replacement Considerations

Direct substitutes include DMTH69M8LFVW-7 and DMTH69M8LFVWQ-13, which share the same PowerDI3333-8 case outline. Verify pinout compatibility and ensure the alternative part meets or exceeds the 60V drain-source voltage and 45A continuous current requirements specified in the original datasheet.