DMT69M8LPS-13

$0.82

Description：MOSFET N-CHA 60V 10.2A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d535a12ac265 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHA 60V 10.2A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.2A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 113W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT69M8LPS-13

Overview

The DMT69M8LPS-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 60 V and a maximum on-resistance (R_DS(ON)) of 12 mΩ at V_GS = 10 V. The device supports a continuous drain current of 70 A at case temperature +25°C and 10.2 A at ambient temperature +25°C. Total gate charge is 33.5 nC at V_GS = 10 V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management with minimized on-state resistance and superior switching performance.
Includes 100% unclamped inductive switching testing to ensure robust end-application reliability.
Qualified to AEC-Q101 standards for high-reliability automotive applications.

Applications

High frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the component datasheet revision and specific ordering suffixes before procurement. Confirm that the PowerDI5060-8 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified thermal resistance values under your operating conditions. Check for any RoHS or halogen-free compliance documentation if required by your manufacturing standards.

Selection Notes

Select this component for designs requiring a 60 V N-channel MOSFET with low conduction losses. Consider the 70 A continuous drain current capability when sizing heatsinks or copper planes. Evaluate the gate charge specifications against your driver capabilities to optimize switching speeds. Verify that the operating temperature range meets your environmental constraints.

Part Context

This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. The PowerDI5060-8 package provides an exposed drain pad for efficient heat dissipation directly through the substrate. This design facilitates lower thermal resistance compared to traditional leaded packages, making it suitable for compact power management solutions.

Replacement Considerations

The datasheet explicitly states that this part is not recommended for new designs and recommends using DMT6012LPS as a replacement. Verify compatibility with the alternative part number regarding pinout, electrical characteristics, and package dimensions before substitution.