ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9081 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMT8003SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features an 80 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 100 A. Its maximum on-resistance (Rds On) is specified at 3.9 mOhms. The gate-source voltage range extends from -20 V to +20 V, with a typical threshold voltage of 2 V. Total gate charge (Qg) is 124.3 nC. The component operates within a temperature range of -55 °C to +175 °C junction temperature, with a power dissipation rating of 125 W.
Feature Summary
- High current handling capability with 100 A continuous drain current rating
- Low on-resistance design for efficient power switching
- Extended thermal stability supporting up to 175 °C junction temperature
- Compact PowerDI5060-8 surface-mount packaging
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation before integration. Confirm that the PowerDI5060-8 footprint matches the target PCB layout requirements. Ensure thermal management solutions align with the 125 W power dissipation specifications under intended operating conditions.
Selection Notes
Select this component when high current capacity and low conduction losses are required in a compact form factor. The 80 V rating suits applications operating below this threshold. Consider the 124.3 nC gate charge for driver compatibility. Verify that the 175 °C max junction temperature meets the system's thermal environment constraints.
Part Context
This part belongs to the DMTH/DMT series of N-channel MOSFETs from Diodes Incorporated. These devices are designed for general-purpose power switching applications requiring robust performance in small packages. The PowerDI family offers improved thermal performance compared to traditional leaded packages while maintaining a low profile suitable for modern surface-mount assembly processes.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference key parameters such as Vds, Id, Rds On, and package type when evaluating potential replacements.
