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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2254 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 23.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT8008LFG-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 48A at TC = +25°C. The device offers a low static drain-source on-resistance (RDS(ON)) of 6.9mΩ at VGS = 10V and 10.4mΩ at VGS = 4.5V. Total gate charge (Qg) is 37.7nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features an excellent figure of merit (FOM) defined by the product of gate-drain charge and on-resistance.
- Utilizes advanced technology optimized specifically for DC-DC converter applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring an 80V N-channel MOSFET with low conduction losses. Consider the 6.9mΩ RDS(ON) specification for optimizing thermal performance in high-current applications. Evaluate the PowerDI3333-8 package dimensions against available PCB real estate constraints. Verify that the gate drive voltage supports the specified RDS(ON) thresholds for optimal switching efficiency.
Part Context
This part belongs to the DMT8008LFG series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for compact, high-density power solutions. The series emphasizes low on-resistance and robust switching capabilities, targeting modern power management architectures where space and thermal efficiency are critical design parameters.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package type specifications precisely.
