DMT8008LSS-13

$0.32

Description：MOSFET BVDSS: 61V-100V SO-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4863788618ef Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V-100V SO-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2840 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DMT8008LSS-13

Overview

The DMT8008LSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 80 V and a continuous drain current (I_D) of 13 A at +25°C ambient temperature. The device offers a maximum on-resistance (R_DS(ON)) of 8 mΩ at V_GS = 10 V, 9.5 mΩ at V_GS = 6 V, and 12 mΩ at V_GS = 4.5 V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

Designed for high conversion efficiency with minimized on-state losses through low R_DS(ON).
Capable of fast switching speeds and low input capacitance for high-frequency applications.
Verified robustness via 100% unclamped inductive switching (UIS) testing during production.

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance standards and is free from halogen and antimony. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when an 80 V rating and 13 A continuous current capability are required in an SO-8 package. Consider the gate threshold voltage characteristics and total gate charge values for driver compatibility. Evaluate thermal resistance parameters against the expected power dissipation and ambient operating conditions.

Part Context

This part belongs to the DMT8008LSS series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on balancing low on-resistance with superior switching performance. The standard packaging format for this specific model number involves tape and reel delivery suitable for automated surface-mount assembly processes.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, pin configurations, and thermal characteristics to ensure functional equivalence without compromising circuit safety or performance.