DMT8008SCT

$0.89

Description：MOSFET BVDSS: 61V~100V TO220AB T
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:08b0f6aa2434 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V TO220AB T
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMT8008SCT

Overview

The DMT8008SCT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 111A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 7.5mΩ at VGS = 10V and ID = 30A. It utilizes a TO-220AB package with a thermal resistance from junction to case (RθJC) of 0.75°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low input capacitance for fast switching performance
High BVDSS rating suitable for power applications
Low input/output leakage characteristics

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix 'C' against official documentation, as it indicates tube packaging containing 50 pieces per tube. Confirm that the required RoHS compliance and halogen-free status align with project specifications. Ensure the TO-220AB through-hole mounting style matches the target PCB layout requirements before finalizing procurement.

Selection Notes

Select this component when an 80V N-channel MOSFET with high current handling capability is required in a TO-220AB package. The low RDS(ON) value supports efficient power management. Verify that the thermal design accommodates the specified junction-to-case thermal resistance. Ensure gate drive voltages meet the threshold requirements for optimal conduction.

Part Context

This part belongs to the Diodes Incorporated family of 80V N-channel enhancement mode MOSFETs. It is designed for high-efficiency power management applications requiring low on-resistance and fast switching speeds. The product is lead-free, RoHS compliant, and halogen/antimony free.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent parts or direct replacements. Do not substitute based solely on generic electrical parameters without confirming pinout compatibility and package dimensions.