DMTH10H005SCT

$2.53

Description：MOSFET N-CH 100V 140A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:d59c18891789 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 140A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：111.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8474 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：187W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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DMTH10H005SCT

Overview

The DMTH10H005SCT is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and a maximum continuous drain current of 140A at +25°C case temperature. The device exhibits a typical static drain-source on-resistance of 3.8mΩ at VGS=10V, with a maximum rated value of 5mΩ. It supports an operating junction temperature range from -55°C to +175°C. Key dynamic parameters include a total gate charge of 111.7nC and a reverse recovery time of 70ns for the integrated body diode.

Feature Summary

Rated for operation up to +175°C junction temperature
Guaranteed 100% unclamped inductive switching capability
Low input capacitance and low leakage currents
High breakdown voltage rating suitable for power applications

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify component authenticity through authorized distribution channels only. Confirm datasheet revision DS39468 Rev. 2 - 2 matches the specific lot received. Ensure compliance with RoHS Directive 2002/95/EC and REACH requirements as specified in the manufacturer documentation. Validate that the TO-220AB package dimensions align with target PCB footprint constraints before finalizing procurement orders.

Selection Notes

Select this component when high efficiency and robustness against inductive loads are required. The low on-resistance minimizes conduction losses in power management circuits. Verify thermal management capabilities meet system requirements given the 0.8°C/W junction-to-case thermal resistance. Ensure gate drive voltages remain within the ±20V absolute maximum rating to prevent dielectric breakdown during operation.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs designed for high-efficiency power management. It utilizes a TO-220AB leaded package constructed with green molding compound. The device integrates a single channel optimized for fast switching speeds. It is distinct from surface-mount variants like the PowerDI packages found in other series members.

Replacement Considerations

Cross-reference with other Diodes Incorporated TO-220 N-channel MOSFETs sharing identical pinouts and similar electrical ratings. Verify that substitute components maintain equivalent avalanche energy ratings and thermal characteristics. Ensure replacement parts comply with the same environmental directives and packaging specifications.