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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2361 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH10H009LFG-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and operates within a junction temperature range of -55°C to +175°C. The device provides a continuous drain current of 55A at case temperatures of +25°C, with an on-state resistance (RDS(ON)) of 8.5mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. Packaged in a PowerDI3333-8 footprint, it offers thermal dissipation capabilities of 2.5W at ambient temperature and 39W at case temperature.
Feature Summary
- Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
- 100% unclamped inductive switching (UIS) tested in production to ensure reliable and robust end applications.
Applications
- Synchronous Rectifier
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. The -13 suffix indicates a tape and reel configuration containing 3,000 units per reel. Confirm that the component meets RoHS compliance standards and is halogen-free if environmental specifications are mandatory for the intended assembly process.
Selection Notes
Select this component when low conduction losses and compact board space are critical design constraints. The device is suitable for applications requiring operation up to 175°C junction temperature. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance and switching characteristics.
Part Context
This part belongs to the DMTH10H series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 package, which is engineered for high thermal efficiency and small footprint requirements. The series targets modern power management solutions where size reduction and energy efficiency are primary engineering objectives.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure functional compatibility without circuit modification.
