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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2361 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 39W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH10H009LFGQ-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features an on-resistance of 8.5mΩ at VGS=10V and 13.6mΩ at VGS=4.5V, supporting continuous drain currents of 46A at TC=25°C and 12A at TA=25°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 39W at case temperature and 2.5W at ambient temperature.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Synchronous rectifiers
- Backlighting
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the component meets IATF 16949 manufacturing facility requirements if automotive change control protocols are necessary for the intended deployment.
Selection Notes
Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages while maintaining high current handling capabilities. The low gate-drain charge product makes it suitable for high-frequency switching applications where minimizing switching losses is critical for overall system efficiency.
Part Context
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs designed for stringent reliability requirements. It utilizes advanced silicon technology to achieve low on-resistance within a compact molded plastic package rated UL 94V-0. The device is halogen and antimony-free, adhering to green material specifications.
Replacement Considerations
Consult official substitution lists for verified equivalents. Ensure any replacement maintains the same PowerDI3333-8 pinout and thermal characteristics to preserve board layout integrity and heat dissipation performance.
