DMTH10H009LPS-13

$0.32

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b6d76af14491 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H009LPS-13

Overview

The DMTH10H009LPS-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 8mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. Continuous drain current reaches 100A at TC=+25°C, with a pulsed drain current of 400A. The device supports an operating temperature range from -55°C to +175°C and includes 100% UIS testing.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Thermally efficient PowerDI5060-8 package design
Lead-free finish compliant with RoHS directives

Applications

Motor Control
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance standards relevant to the target market. Ensure the procurement channel is authorized by Diodes Incorporated to guarantee product authenticity and traceability.

Selection Notes

Select this component when high thermal performance and low on-state resistance are critical. The PowerDI5060-8 package provides a compact form factor suitable for space-constrained designs. Evaluate gate charge requirements against driver capabilities to optimize switching speed and efficiency.

Part Context

This part belongs to the DMTH10H series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology within the PowerDI family of surface-mount packages designed for high power density applications.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.