DMTH10H009SPS-13

$0.33

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ea1e585afec6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H009SPS-13

Overview

The DMTH10H009SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and an on-resistance of 8.9mΩ at VGS=10V. The device supports a continuous drain current of 88A at TC=25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount format, it includes thermal characteristics such as a junction-to-case resistance of 1.5°C/W.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Thermally efficient package design for cooler running applications
Low input capacitance and fast switching speed

Applications

Motor controls
DC-DC converters
Power managements
Notebook battery power management
Load switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the PowerDI5060-8/SWP variant matches the intended board layout requirements. Ensure compliance with RoHS 3 directives and halogen-free specifications if mandated by the end application standards.

Selection Notes

Select this component when high ambient temperature resilience up to 175°C is required. The low RDS(ON) minimizes conduction losses, while the fast switching characteristics support high-frequency DC-DC converter designs. Verify that the 100V rating aligns with the system's maximum transient voltage levels.

Part Context

This part belongs to the DMTH10H series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI® platform, which provides a compact footprint suitable for space-constrained portable electronics. The series emphasizes high conversion efficiency and robustness against inductive load transients.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet designation DMTH10H009SPSQ.

FAQ

Is the DMTH10H009SPS-13 qualified for automotive applications?

No, the standard DMTH10H009SPS-13 is not explicitly listed as automotive-qualified. An automotive-compliant part is available under the separate designation DMTH10H009SPSQ.