DMTH10H010LCTB-13

$1.68

Description：MOSFET N-CH 100V 108A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c0927bd4d7d8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 108A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2592 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 166W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DMTH10H010LCTB-13

Overview

The DMTH10H010LCTB-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 100A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 9.5mΩ at VGS = 10V and ID = 13A, with a typical value of 8.7mΩ. Total gate charge (Qg) is typically 53.7nC at VDD = 50V, ID = 13A, and VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
Features 100% unclamped inductive switching capability to ensure robust end-application reliability.
Designed to minimize power losses through low RDS(ON) and reduce switching losses via low Qg.

Applications

Synchronous Rectification
Inverter circuits
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 800 units per reel. Confirm that the component utilizes the TO263AB (D2PAK) case style as specified in the manufacturer's documentation. Ensure compliance requirements such as RoHS and Halogen-free status are validated against the latest product specifications before procurement.

Selection Notes

Select this component for applications requiring high-efficiency power management where low conduction and switching losses are critical. The device is appropriate for designs needing reliable performance under high ambient temperatures due to its +175°C rating. Consider the thermal resistance characteristics and package limitations when designing heat dissipation solutions for synchronous rectification or DC-DC converter topologies.

Part Context

This part belongs to the DMTH10H series of advanced N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-resistance with superior switching performance. The series targets high-efficiency power management applications, offering improved reliability through verified unclamped inductive switching capabilities compared to standard industry counterparts.

Replacement Considerations

Consult official substitution lists for equivalent parts within the same family or alternative manufacturers. Verify pinout compatibility, specifically the source-drain-body connection in the D2PAK package. Ensure replacement components match the 100V BVDSS and 100A ID ratings while maintaining similar thermal and electrical characteristics.