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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH10H015SK3Q is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a 100V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 14mΩ at VGS=10V and 20mΩ at VGS=6V, supporting continuous drain currents of 59A at TC=+25°C and 42A at TC=+100°C. Packaged in a TO-252 (DPAK) housing, it includes an exposed drain pad for thermal management.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching testing for robustness
- Low gate charge minimizes switching losses during operation
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 and halogen-free requirements as defined by the manufacturer's green product definitions. Ensure the design accounts for the IATF 16949 certified manufacturing facilities required for automotive change control protocols.
Selection Notes
Select this component when designing circuits requiring high reliability under elevated thermal conditions. The low on-resistance characteristics are suitable for minimizing conduction losses in power stages. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance. Consider the thermal resistance values provided for both ambient and case mounting scenarios.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. It utilizes silicon technology within a TO-252 package. The series is engineered to meet stringent automotive quality standards, distinguishing it from general-purpose industrial components through its qualification processes and extended temperature ratings.
Replacement Considerations
Consult official substitution lists for verified alternatives. Generic replacements may not match the AEC-Q101 qualification or PPAP requirements essential for automotive systems.
