DMTH10H015SPSW-13

$0.37

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ba58697d0bb2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 94W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H015SPSW-13

Overview

The DMTH10H015SPSW-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 100 V and operates with a continuous drain current (I_D) of 56 A at a case temperature of +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 14.5 mΩ at V_GS = 10V and 19.5 mΩ at V_GS = 6V, both measured at I_D = 20A. Total gate charge (Q_g) is 30.1 nC at V_DD = 50V and I_D = 10A. Thermal resistance from junction to case (R_θJC) is 1.6 °C/W. The component is housed in a PowerDI5060-8/SWP package and supports an operating junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments
100% unclamped inductive switching (UIS) tested in production to ensure robust end-application reliability
Thermally efficient PowerDI5060-8 package design that minimizes thermal resistance for cooler running applications
Low input capacitance combined with fast switching speed characteristics

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm compliance with RoHS directives and halogen-free requirements if environmental specifications are mandatory for the assembly process. Ensure the selected component matches the PowerDI5060-8/SWP mechanical outline dimensions for PCB footprint compatibility.

Selection Notes

Select this component when a 100V rating and low on-resistance are required for high-current switching applications. Evaluate the thermal performance based on the 1.6 °C/W junction-to-case resistance and the 56A continuous current capability at +25°C case temperature. Consider the 175°C maximum junction temperature rating for designs operating in elevated thermal environments.

Part Context

This part belongs to the DMTH10H series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is packaged in the PowerDI format. The DMTH10H015SPSW variant specifically targets applications requiring optimized on-state losses while maintaining superior switching performance within a compact surface-mount form factor.