DMTH10H015SPSWQ-13

$0.39

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fa3273ed740c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 94W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H015SPSWQ-13

Overview

The DMTH10H015SPSWQ is a 100V N-Channel Enhancement Mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 14.5mΩ at VGS=10V and 19.5mΩ at VGS=6V, supporting continuous drain currents of 56A at TC=25°C and 39A at TC=100°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 94W at TC=25°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% Unclamped Inductive Switching (UIS) tested in production
Thermally efficient PowerDI5060-8/SWP package design
Low input capacitance and fast switching speed characteristics

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit Tape & Reel carrier configuration. Confirm compliance with AEC-Q101 qualification and IATF 16949 manufacturing standards if automotive application requirements are necessary. Ensure the selected variant matches the required packing quantity and type.

Selection Notes

Select this component for high ambient temperature environments requiring robust UIS reliability. The low RDS(ON) minimizes conduction losses, while the fast switching characteristics support high-frequency applications. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance and thermal management.

Part Context

This part belongs to Diodes Incorporated's new generation of N-Channel Enhancement Mode MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It utilizes a molded plastic 'Green' molding compound with UL flammability classification rating 94V-0.