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The DMTH10H025LPDWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP surface-mount packaging and operates with a drain-source voltage (Vds) of 100 V. The device features a maximum continuous drain current (Id) of 97 A at case temperature and a typical on-resistance (Rds(on)) of 2.5 mΩ at Vgs = 10 V. It supports an operating junction temperature range from -55 °C to +175 °C and carries AEC-Q101 automotive qualification.
Verify the specific suffix Q-13 against official Diodes Incorporated documentation to confirm automotive grade status and tape-and-reel quantity. Ensure the ordering part number matches the exact PowerDI5060-8/SWP variant required for your PCB footprint. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement orders.
Select this component when designing circuits requiring robust automotive compliance alongside high current handling in a small form factor. Compare the 2.5 mΩ on-resistance against system efficiency targets and verify that the 100 V breakdown voltage provides adequate margin for the specific supply rail. Confirm thermal requirements align with the package's heat dissipation capabilities.
This part belongs to the DMTH10 series, which focuses on high-performance N-channel MOSFETs designed for automotive and industrial markets. The series emphasizes low Rds(on) values within the PowerDI family of packages, balancing electrical performance with space-constrained board layouts.
Consult the manufacturer's official substitution guide for verified alternatives. Do not assume pin-compatible replacements share identical thermal or electrical ratings without explicit datasheet confirmation.