DMTH10H025SK3-13

$0.77

Description：MOSFET N-CH 100V 46.3A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:881f0ee6a957 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 46.3A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：46.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1544 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH10H025SK3-13

Overview

The DMTH10H025SK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 100 V and a maximum continuous drain current (I_D) of 46.3 A at a case temperature of +25°C. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 23 mΩ at V_GS = 10 V and 30 mΩ at V_GS = 6 V, both measured at I_D = 20 A. Total gate charge (Q_g) is 21.4 nC at V_GS = 10 V. Thermal resistance from junction to case (R_θJC) is 2.0 °C/W. The component operates within a temperature range of -55°C to +175°C and is housed in a TO-252 (DPAK) package.

Feature Summary

Qualified to AEC-Q101 standards for high reliability automotive applications
Features 100% unclamped inductive switching testing for robust end-use performance
Utilizes low gate charge technology to minimize switching losses
Constructed with lead-free finish, RoHS compliant, and halogen/antimony free materials

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the requested part number matches the exact electrical specifications and thermal characteristics documented in the official datasheet DS40357 Rev. 3. Ensure compatibility with the specified TO-252 (DPAK) footprint during procurement planning.

Selection Notes

Select this component for designs requiring a 100 V rating with high current handling capabilities up to 46.3 A. Consider the low R_DS(ON) values for minimizing conduction losses in power management topologies. Evaluate the thermal resistance parameters against the system's heat dissipation requirements to ensure operation remains within the -55°C to +175°C junction temperature limits.

Part Context

This device belongs to the DMTH10H series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered for high-efficiency power management applications, emphasizing low on-resistance and fast switching speeds. The specific model utilizes a TO-252 (DPAK) case constructed from molded plastic with a matte tin annealed copper leadframe, designed for surface mount installation.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Verify that any alternative component matches the 100 V drain-source voltage, TO-252 package dimensions, and equivalent electrical characteristics before implementation.