DMTH10H030LK3-13

$0.33

Description：MOSFET N-CH 100V 28A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:03dd3de1c20f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 28A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

DMTH10H030LK3-13

Overview

The DMTH10H030LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 30mΩ at VGS=10V and 45mΩ at VGS=6.0V, with a continuous drain current of 28A at TC=+25°C. Packaged in a TO252 (DPAK) case, it is supplied in tape and reel quantities of 2,500 units.

Feature Summary

Qualified to AEC-Q101 standards for high reliability applications
Rated for operation up to +175°C junction temperature
Features 100% unclamped inductive switching capability
Low gate charge minimizes switching losses

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the component datasheet revision and specific electrical parameters against official Diodes Incorporated documentation before integration. Confirm that the TO252 package dimensions and pinout align with the target PCB layout requirements. Ensure compliance with RoHS and halogen-free specifications if required by the end product design constraints.

Selection Notes

Select this component for designs requiring robust performance in high ambient temperature environments due to its +175°C rating. Consider the low on-resistance characteristics for minimizing conduction power losses in efficient power management systems. Evaluate the thermal resistance values to ensure adequate heat dissipation strategies are implemented for the intended operating conditions.

Part Context

This part belongs to the DMTH10H series of N-channel MOSFETs from Diodes Incorporated. These devices utilize advanced silicon technology to achieve low on-resistance and fast switching speeds. The series is designed to meet automotive reliability standards, making them suitable for demanding industrial and consumer electronics applications requiring high efficiency.