DMTH10H032LDVW-13

DMTH10H032LDVW-13

$0.28
  • Description:MOSFET 2N-CH 100V 7.2A PWRDI3333
  • Series:-

SKU:6aeb8db91d1b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 7.2A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
  • Rds On (Max) @ Id, Vgs:32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:683pF @ 50V
  • Power - Max:1.5W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerDI3333-8 (SWP) (Type UXD)
  • Grade:-
  • Qualification:-

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DMTH10H032LDVW-13

Overview

The DMTH10H032LDVW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. Key electrical parameters include a maximum gate charge of 11.9 nC, input capacitance of 683 pF, and a threshold voltage of 2.5 V. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • N-channel enhancement mode MOSFET with 100 V breakdown voltage
  • Low on-resistance for efficient power switching
  • Surface-mount PowerDI3333-8 package with wettable flanks
  • Automotive-grade reliability compliant with AEC-Q101

Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power management modules

Procurement Notes

Verify the specific suffix 'LDVW' against official Diodes Incorporated documentation to confirm exact reel quantity and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment due to the PowerDI3333-8 footprint. Confirm RoHS3 compliance status for target markets before finalizing procurement orders.

Selection Notes

Select this component when a compact surface-mount solution is required for 100 V applications. The PowerDI3333-8 package offers thermal efficiency suitable for space-constrained designs. Evaluate the 30 mΩ on-resistance against system conduction loss requirements. Verify that the 26 A current rating meets peak load demands under expected thermal conditions.

Part Context

This part belongs to the DMTH10 series of high-performance N-channel MOSFETs from Diodes Incorporated. The series is designed for general-purpose power switching applications requiring low Rds(on) in small footprints. The DMTH10H032 variant specifically targets 100 V platforms where moderate current handling and fast switching are necessary.

Replacement Considerations

DMT10H032LDVWQ-13 is listed as a parameter-equivalent alternative. Verify pinout and thermal characteristics match before substitution.

DMTH10H032LDVW-13DMTH10H032LDVW-13
$0.28
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