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The DMTH10H032LDVW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. Key electrical parameters include a maximum gate charge of 11.9 nC, input capacitance of 683 pF, and a threshold voltage of 2.5 V. It operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix 'LDVW' against official Diodes Incorporated documentation to confirm exact reel quantity and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment due to the PowerDI3333-8 footprint. Confirm RoHS3 compliance status for target markets before finalizing procurement orders.
Select this component when a compact surface-mount solution is required for 100 V applications. The PowerDI3333-8 package offers thermal efficiency suitable for space-constrained designs. Evaluate the 30 mΩ on-resistance against system conduction loss requirements. Verify that the 26 A current rating meets peak load demands under expected thermal conditions.
This part belongs to the DMTH10 series of high-performance N-channel MOSFETs from Diodes Incorporated. The series is designed for general-purpose power switching applications requiring low Rds(on) in small footprints. The DMTH10H032 variant specifically targets 100 V platforms where moderate current handling and fast switching are necessary.
DMT10H032LDVWQ-13 is listed as a parameter-equivalent alternative. Verify pinout and thermal characteristics match before substitution.