DMTH10H032LDVW-7

$0.30

Description：MOSFET 2N-CH 100V 7.2A PWRDI3333
Series：-

SKU:d3062dfa7c11 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 7.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
Power - Max：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
Grade：-
Qualification：-

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DMTH10H032LDVW-7

Overview

The DMTH10H032LDVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 11.9 nC, input capacitance (Ciss) of 683 pF, and a gate-source threshold voltage of 2.5 V. It operates within a junction temperature range of -55°C to 175°C with a power dissipation of 1.7 W.

Feature Summary

Surface-mount construction with wettable flanks for enhanced solder joint inspection reliability
High breakdown voltage capability suitable for 48V and higher bus voltage applications
Low gate charge characteristics facilitating efficient switching performance

Applications

DC-DC converter synchronous rectification
Load switch circuits in server and communication equipment
Motor control and battery protection systems

Procurement Notes

Verify the specific suffix 'LDVW' against official Diodes Incorporated documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS3 and REACH requirements as stated in the manufacturer's environmental declarations. Cross-reference the full part number with authorized distributor catalogs to confirm availability and lead times prior to ordering.

Selection Notes

Select this component when a 100V rating is required alongside moderate current handling in a compact surface-mount footprint. The PowerDI3333-8 package offers thermal efficiency for space-constrained designs. Evaluate the 30 mΩ on-resistance against system conduction loss requirements and ensure the 1.7 W power dissipation rating aligns with the thermal management strategy of the target application.

Part Context

This part belongs to the DMTH10 series of high-performance N-channel MOSFETs from Diodes Incorporated. The series focuses on balancing high voltage ratings with low on-resistance in small packages. The DMTH10H032 variant specifically targets applications requiring 100V blocking capability with optimized switching characteristics for modern power management topologies.