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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 24A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
- Power - Max：3W (Ta), 37W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH10H032LPDW-13 is a dual-channel N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP (Type UXD) package. It features a drain-source voltage of 100V and a maximum on-resistance of 32mΩ at VGS=10V with a continuous drain current of 24A at TC=+25°C. The device supports an operating temperature range up to +175°C and includes wettable flank pads for improved optical inspection.
Feature Summary
- Dual-channel configuration within a single compact PowerDI5060-8 package
- Rated for high ambient temperatures with operation up to +175°C
- Wettable flank design facilitates visual solder joint inspection
- Validated for reliability through 100% unclamped inductive switching testing
Applications
- DC-DC converters
- Motor control systems
- High efficiency power management applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2500 units per carrier. Confirm that the component meets RoHS 3 compliance standards and ensure the application environment accommodates the specified thermal characteristics and junction temperature limits.
Selection Notes
Select this component when a dual-channel solution is required to save board space in power management designs. The low on-resistance and fast switching capabilities make it suitable for high-efficiency applications. Ensure the gate drive voltage aligns with the specified thresholds for optimal performance.
Part Context
This part belongs to the DMTH10 series of dual-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI®5060-8/SWP package, which provides enhanced thermal performance and mechanical robustness compared to standard packages. The 'Green' device designation indicates it is halogen and antimony-free.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching the dual-channel topology, 100V rating, and PowerDI5060-8 package dimensions.
