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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 24A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
- Power - Max：3W (Ta), 37W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH10H032LPDWQ-13 is a dual-channel N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (SWP) package. It features a drain-source voltage of 100V and operates up to a junction temperature of +175°C. At TC = +25°C, the continuous drain current is 24A with a maximum on-resistance of 32mΩ at VGS = 10V. The device includes wettable flank terminals for improved optical inspection.
Feature Summary
- Dual-channel configuration within a single compact PowerDI5060-8 package
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Wettable flank design facilitates enhanced optical solder joint inspection
- Rated for high ambient temperatures with operation up to +175°C
Applications
- DC-DC converters
- Motor control systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as defined in the official datasheet. Confirm that the 'Type UXD' designation matches the required wettable flank specifications for your assembly process. Ensure compliance with RoHS 3 and Halogen-free requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual-channel solution is required for space-constrained automotive designs. The low input capacitance supports fast switching speeds suitable for high-frequency applications. Verify thermal management capabilities against the specified RθJA and RθJC values for your specific PCB layout and cooling conditions.
Part Context
This part belongs to the DMTH10H series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes silicon technology optimized for robustness in harsh environments. The PowerDI5060-8 package provides a balance between thermal performance and footprint efficiency compared to larger discrete packages.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
