DMTH10H032LPSW-13

$0.83

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:880a87820d0f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.4W (Ta), 68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H032LPSW-13

Overview

The DMTH10H032LPSW-13 is a 100V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (SWP) package. It features a maximum on-resistance of 32mΩ at VGS=10V and 50mΩ at VGS=4.5V. The device supports continuous drain currents of 33A at TC=+25°C and 23A at TC=+100°C. Key electrical parameters include a gate threshold voltage of up to 2.5V, total gate charge of 11.9nC at VGS=10V, and input capacitance of 683pF. It operates within a temperature range of -55°C to +175°C.

Feature Summary

Designed for high conversion efficiency with minimized on-state resistance while maintaining superior switching performance.
Features wettable flank terminals to facilitate improved optical inspection during manufacturing.
Undergoes 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.
Constructed with lead-free finish and halogen/antimony-free green molding compound.

Applications

Synchronous rectifiers
Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration as defined in the official datasheet. Confirm that the PowerDI5060-8 (SWP) Type UX package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS 3 and REACH regulations if required by your regional standards before finalizing procurement.

Selection Notes

Select this component when a 100V rating and low RDS(ON) are required for compact power designs. The PowerDI5060-8 package offers a balance between thermal dissipation and board space efficiency compared to larger packages. Consider the 33A continuous current capability at case temperature for applications requiring significant load handling without excessive heatsinking.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI® 5060-8 surface-mount technology package, which integrates an exposed drain pad for enhanced thermal performance. The 'LPSW' designation indicates specific pinout and wettable flank characteristics within this product family.

Replacement Considerations

Consult the manufacturer's official substitution guide or contact Diodes Incorporated directly for verified equivalent parts. Do not assume functional compatibility based solely on voltage and current ratings; verify pinout, thermal resistance, and switching characteristics against the original design specifications.