DMTH10H032SDVW-7

$0.30

Description：MOSFET 2N-CH 100V 6.2A PWRDI3333
Series：-

SKU:08a847534939 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 6.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：544pF @ 50V
Power - Max：1.4W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
Grade：-
Qualification：-

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DMTH10H032SDVW-7

Overview

The DMTH10H032SDVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. Key electrical parameters include a maximum gate charge of 11.9 nC, an input capacitance of 683 pF, and a gate-source threshold voltage of 2.5 V. It operates within a junction temperature range of -55°C to 175°C with a power dissipation of 1.7 W.

Feature Summary

Utilizes PowerDI3333-8(SWP)UX package for surface mount installation with wettable flanks to enhance solder joint inspection reliability.
Engineered as a single N-channel enhancement mode device optimized for low on-resistance performance in high-voltage applications.

Applications

DC-DC converter circuits
Synchronous rectification modules
Load switch implementations

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm package type and tape-and-reel specifications. Confirm RoHS3 compliance status directly from the manufacturer datasheet prior to integration. Ensure the ordering part number matches the exact thermal and mechanical requirements of the target PCB layout.

Selection Notes

Select this component when a 100 V rating is required alongside moderate current handling capabilities. Evaluate the thermal resistance characteristics relative to the available copper area on the printed circuit board. Compare the gate charge specifications against the driving capability of the intended controller IC to ensure efficient switching transitions.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs designed for general-purpose power switching. The series focuses on balancing breakdown voltage with conduction losses. The specific model utilizes a compact surface-mount footprint suitable for space-constrained consumer and industrial electronics designs requiring reliable high-side or low-side switching.